作者：李村¹, 杨鑫婉¹, 赵玉龙¹, 程鑫², 田雷²

作者单位：1. 西安交通大学机械工程学院，陕西 西安 710049;
2. 中国电子科技集团公司第四十九研究所，黑龙江 哈尔滨 100048

关键词：耐高温;SOI;压力传感器;无引线封装;MEMS;压阻效应

摘要：

无引线封装技术能够将采用SOI技术的MEMS压力传感器的工作温度提高到300 ℃以上，解决传统充油封装无法耐受高温的问题，然而，无引线封装亦对SOI压力敏感芯片结构提出新的挑战。为应对此问题，该文提出适用于无引线封装的压力敏感芯片总体结构，主要研究压敏电阻掺杂浓度选择、重掺杂引线盘和金属点电极、键合玻璃结构、硅玻键合静电密封环等内容。通过大面积重掺杂的引线盘及金属点电极的设计解决硅-玻璃在电路器件层的静电键合问题。在键合玻璃上设计通孔，其位置对应金属点电极，解决电极厚度对键合的影响问题，同时实现欧姆接触。设计静电密封环结构，解决压力敏感膜片及测量电路的密封问题。最后，研制适用于无引线封装的SOI压力敏感芯片样片，证明该文压力敏感芯片总体结构有效。

SOI pressure sensor chip suitable for leadless package
LI Cun¹, YANG Xinwan¹, ZHAO Yulong¹, CHENG Xin², TIAN Lei²
1. School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
2. The 49th Research Institute of China Electronics Technology Group Corporation, Harbin 100048, China
Abstract: Leadless package technology can increase the operating temperature of MEMS pressure sensors using SOI technology to above 300 ℃, which can replace traditional oil-filled package. However, leadless package also proposes new challenges for the design of SOI pressure sensor chips. In order to solve this problem, this paper proposes a new pressure sensor chip which is suitable for leadless package. This paper mainly studies the doping concentration of piezoresistor, heavily doped lead pads, metal point electrodes, bonding glass structure, and seal ring. The design of large-area heavily doped lead plates and metal point electrodes solve the problem of silicon-glass bonding in the top device layer. Through holes are designed on the bonding glass, and their position corresponds to the metal point electrode, which solves the influence of electrode thickness on the bonding and realizes ohmic contact at the same time. The sealing ring is designed to solve the sealing problem of pressure sensitive diaphragm and measuring circuit. Finally, a sample of SOI pressure sensor chip suitable for leadless package is developed, which proves the effectiveness of the pressure sensor chip proposed in this paper.
Keywords: high temperature;SOI;pressure sensor;leadless package;MEMS;piezoresistive effect
2020, 46(12):54-59  收稿日期: 2020-10-20;收到修改稿日期: 2020-11-20
基金项目: 国家重点研发计划(2018YFB2002900)
作者简介: 李村(1986-),男,山东潍坊市人,讲师,博士,研究方向为微纳传感与制造技术
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