作者：韩志国, 李锁印, 赵琳, 冯亚南, 梁法国
作者单位：中国电子科技集团公司第十三研究所, 河北 石家庄 050051
关键词：光谱型椭偏仪;椭偏角校准;膜厚标准样片;仿真
摘要：
针对光谱型椭偏仪校准结果受测量模型影响大的问题进行研究，提出一种不受测量模型影响的校准方法，即通过校准椭偏角实现光谱型椭偏仪的校准。依据椭偏仪测量原理，通过仿真分析确定实现较大范围内椭偏角校准所需标准样片的薄膜厚度量值，并采用半导体热氧化工艺制备出性能稳定的膜厚标准样片。使用标准样片对型号为M-2000XF的光谱型椭偏仪的椭偏角进行校准，样片厚度为2，50，500 nm对应的椭偏角偏差分别在0.6，1.5，2以内，该偏差对薄膜厚度的影响不超过0.5 nm。经实验表明：该方法不受椭偏仪测量模型的影响，可有效解决光谱型椭偏仪的校准问题。
A calibration method for spectroscopic ellipsometer
HAN Zhiguo, LI Suoyin, ZHAO Lin, FENG Ya'nan, LIANG Faguo
The 13th Institute of CETC, Shijiazhuang 050051, China
Abstract: In order to solve the problem that spectroscopic ellipsometry calibration results is effected by measurement model, a calibration method without being influenced by measurement model is proposed to calibrate spectroscopic ellipsometer by calibrating the elliptic angle. Standard sample film thickness required by calibration of elliptic angle is determined in wide range via simulation analysis based on the ellipsometry principle, and film thickness standard sample with stable performance is fabricated by using semiconductor thermal oxidation process. When calibrating the elliptic angle of M-2000XF spectral ellipsometer by standard samples, the deviations of elliptic angle corresponding to the thickness of 2,50,500 nm are within ±0.6°,±1.5°,±2°, and result in the influence on the thickness of film no more than ±0.5 nm. The test shows that this method is not affected by the ellipsometry measurement model, and it can effectively solve the calibration problem of spectroscopic ellipsometer.
Keywords: spectroscopic ellipsometer;elliptic angle calibration;film-thickness standard sample;simulation
2017, 43(12): 1-6 收稿日期: 2017-08-23;收到修改稿日期: 2017-09-20
基金项目:
作者简介: 韩志国(1982-),男,河北石家庄市人,高级工程师,研究方向为微电子计量。
参考文献
[1] 施敏,梅凯瑞. 半导体制造工艺基础[M]. 陈军宁,孟坚,译. 合肥:安徽大学出版社,2007:36-50.
[2] LEACH R K, GIUSCA C. Results from a comparison of optical thin film thickness measurements, NPL Report ENG[R]. Tedding:National Physical Laboratory,2009.
[3] GUAN Y, TORTONESE M. Metrology standards for semiconductor manufacturing[C]//International Conference on Solid-state & Integrated Circuits Technology,2004.
[4] 阿查姆,巴夏拉. 椭圆偏振测量术和偏振光[M]. 梁民基,译. 北京:科学出版社,1986:99-101.
[5] 梁诠廷. 物理光学[M]. 3版. 北京:电子工业出版社,2011:219-222.
[6] 胡容. 光学薄膜折射率和厚度测试技术及研究[D]. 南京:南京理工大学,2004.
[7] 黄佐华,吴雪忠,何振江,等. 椭圆偏振法数据处理软件设计[J]. 大学物理,2004,23(9):41-45.
[8] 王永珍,龚国权,崔敬忠. 二氧化硅薄膜的制备及应用[J].真空与低温,2003,9(4):228-233.
[9] VLSI Standards. Silicon dioxide film thickness standard[R]. USA:VLSI,2009.
[10] 景蔚萱,赵惠英,蒋庄德. 纳米样板的制备及其精度分析[J].计量学报,2004,25(1):6-10,42.
[11] 雷李华,邹子英,李源,等. 纳米台阶标准样板的制备和表征[J]. 微纳电子技术,2011,48(9):600-605.
[12] SEAH M P. CCQM-K32 key comparison and P84 pilot study amount of silicon oxide as a thickness of SiO2 on Si, NPL Report AS 27[R]. Tedding:NPL,2008.
