作者：翟玉卫, 梁法国, 郑世棋, 刘岩, 吴爱华, 乔玉娥, 刘霞美

作者单位：中国电子科技集团公司第十三研究所, 河北 石家庄 050051

关键词：结构函数;GaN HEMT;热阻;界面层;瞬态双界面法

摘要：

为准确测量GaN HEMT与夹具界面层的热阻，在两种不同的管壳界面材料条件下，利用经过改进的显微红外热像仪测量GaN HEMT的降温曲线。采用结构函数算法对两种降温曲线进行分析，得到反映器件各层材料热阻的积分结构函数曲线。利用JESD51-14中的方法分别确定结壳热阻分离点和夹具到热沉的热阻分离点，得到结壳热阻Rj-c为1.078 K/W，夹具到热沉的热阻Rf-s为0.404 K/W。利用两种条件下的总热阻减去结壳热阻和夹具到热沉的热阻得到管壳界面材料热阻，导热硅脂热阻为0.657 K/W，空气介质热阻为1.105 K/W。依据该方法可以实现对界面层热阻的测量。

Measurement of interface layer thermal resistance between GaN HEMT and fixture by structure function method

ZHAI Yuwei, LIANG Faguo, ZHENG Shiqi, LIU Yan, WU Aihua, QIAO Yu'e, LIU Xiamei

The 13^th Research Institute, CETC, Shijiazhuang 050051, China

Abstract: In order to accurately measure the thermal interface resistance of GaN HEMT on fixture, cooling curves were measured using an improved IR microscope on two different kinds of thermal interface materials. Structure function method was used to analyze the cooling curves, and the cumulative structure function curves were then obtained which showed the thermal resistances of layers. Based on the means provided in JESD51-14, the separation points of junction-to-case thermal resistance and fixture-to-thermal sink were defined. The junction-to-case thermal resistance(R_j-c) is 1.078 K/W and the fixture-to-thermal sink(R_f-s) is 0.404 K/W. Thus, the thermal interface resistance was obtained by subtracting R_j-c and R_f-s from total thermal resistance, the thermal resistance of thermal grease is 0.657 K/W and the thermal resistance of air is 1.105 K/W. By this method, measurement of the thermal interface resistance can be realized.

Keywords: structure function;GaN HEMT;thermal resistance;interface layer;transient dual interface test method(TDIM)

2018, 44(1): 31-34  收稿日期: 2017-03-07;收到修改稿日期: 2017-04-15

基金项目: 

作者简介: 翟玉卫(1983-),男,河北石家庄市人,高级工程师,硕士,主要从事半导体器件热可靠性检测与分析方面的研究工作。

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