作者：李乐, 祖静, 徐鹏

作者单位：仪器科学与动态测试教育部重点实验室, 中北大学, 山西太原 030051

关键词：高冲击; 晶振芯片; 抗过载能力; 失效; Hopkinson杆

摘要：

为了研究芯片抗高过载能力,本实验选取两种典型晶振芯片:EXO3、KSS,利用Hopkinson杆对其进行高g值冲击,以一维应力波理论估计芯片受到的加速度,并用运力学模型对其内部结构进行分析。结果表明:晶振的内部结构直接影响它的抗冲击性能;与应力波传播方向平行放置的晶振抗冲击性能要高于与应力波传播方向垂直的晶振。

Failure mechanism of crystal oscillator EXO3 and KSS under high shock

LI Le, ZU Jing, XU Peng

Key Laboratory of Instrumentation Science and Dynamic Measurement(Ministry of Education), North University of China Taiyuan 030051, China

Abstract: In order to determine the over-loading resistibility of the microchip,the experiments had been performed using Hopkinson bar,testing two types of crystal oscillator:EXO3 and KSS.The acceleration was estimated according to the theory of one-dimensional stress wave and the internal structure was analyzed under mechanics model.The research shows that:1.The internal structure of oscillator effects the shock-resistibility directly.2.The shock-resistibility of oscillator paralleling the direction of stress wave is stronger than those which are vertical on the direction of stress wave.

Keywords: High-g shock; Crystal oscillator; Shock-resistibility; Failure; Hopkinson bar

2007, 33(3): 88-90  收稿日期: 2006-8-1;收到修改稿日期: 2006-10-12

基金项目: 山西省青年基金资助(20031001)

作者简介: 李乐(1981-),男,硕士研究生,研究方向:智能仪器设计、动态测试技术和信号处理等。

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