作者：乔玉娥, 刘岩, 丁晨, 翟玉卫, 梁法国, 郑世棋
作者单位：中国电子科技集团公司第十三研究所, 河北 石家庄 050051
关键词：MEMS片上测试系统;绝缘性能;片上高阻标准件;标定
摘要：
针对MEMS圆片测试系统中绝缘性能测试的准确测量问题，利用GaAs半导体材料硼离子注入后的高绝缘特性，研究制作片上高值电阻标准件的方案，研制出一种基于GaAs衬底的由2个金属电极构成的1 G片上高阻标准件。组建能有效溯源至国家最高标准的定标装置，使用与标准件探针压点坐标匹配的探针卡作为测试夹具，考核出年稳定性优于0.1%的在片标准件。经试验表明：该标准件携带方便、性能稳定，对开展MEMS片上绝缘性能测试提供有效的现场校准方案，有效解决其溯源问题。
Development of high resistance standard for the MEMS on-wafer insulation test
QIAO Yu'e, LIU Yan, DING Chen, ZHAI Yuwei, LIANG Faguo, ZHENG Shiqi
The 13 th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051, China
Abstract: In order to solve the accurate measurement problem of isolation test about MEMS wafer test system, prepared a plan of manufacturing on-wafer high resistance standard parts and developed a kind of 1GΩ on-wafer high resistance standard parts that were composed of 2 metal poles based on GaAs substrate according to the high insulation properties of GaAs semiconductor materials after boron ions were injected, and also developed a calibrated equipment that can effectively trace back to the highest national standard. By using the probe card matched with pad coordinates of standard parts, assessed the wafer standard parts with annual stability superior to 0.1%. The test indicates that the standard part is portable with stable performance, which provides effective field calibration plan and can effectively solve the source tracing problem.
Keywords: MEMS on-wafer test system;insulation performance;on-wafer high resistance standard;evaluation
2017, 43(7): 88-91 收稿日期: 2016-11-29;收到修改稿日期: 2016-12-12
基金项目:
作者简介: 乔玉娥(1980-),女,河北石家庄市人,高级工程师,硕士,研究方向为电磁仪器计量技术研究。
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